III-N based electronics

Large current carrying capabilities of AlN/GaN/InN based heterostructures and high breakdown voltages make this materials system uniquely suited for applications in high power and/or high frequency electronic devices, including power amplifiers, broadband amplifiers, power switches, and radio frequency switches. AlGaN/GaN insulated gate transistors have additional advantages of extremely low leakage current, higher current swing, improved linearity, better reliability, and higher power. The use of high-K dielectrics in such structures is expected to further improve performance. Reliability issues that have slowed down commercialization of III-N electronics are now being resolved based on better understanding of device physics and device failure mechanisms.