Nonvolatile SRAM cell based on CuxO

A nonvolatile static random access memory (NVSRAM) cell with two back-up Cu
_x
O memory devices is proposed in this paper. The manufacturing process is compatible with the standard CMOS process. By adopting a dynamic supply voltage scheme, the proposed cell can work correctly in four different operation modes. Compared with the standard SRAM cell, the proposed cell offers non-volatile storage which allows the unused blocks of SRAM to be powered down to save energy.