Characterization of low-dielectric-constant SiCON films grown by PECVD under different RF power

In this paper, we report the influence of RF power on carbon- and nitride-doped silicon oxide (SiCON) films deposited by PECVD using SiH
4
, N
2
O and C
2
F
6
precursors. The deposited films are characterized by means of FTIR and XPS, revealing the coexistence of both ring and network frameworks as well as Si-C, Si-N, C-N, C-H and Si-O bonds. The dielectric constant (k) and deposition rate of the SiCON film decrease with increasing the RF power. In the present experiment, a k value of 2.35 is achieved while retaining a low leakage current of 2.7×10
⁻⁷
A/cm
²
at 7.8MV/cm.