Stable operation in 0.87-μm light-emitting diode on Si substrate using Al-free materials

A reliable 877-nm InGaP-GaAs light-emitting diode (LED) is grown on a Si substrate by metalorganic chemical vapor deposition. A conventional Al-contained AlGaAs-GaAs LED on a Si substrate exhibits a rapid degradation because of formation of dark-line defects (DLD's). On the contrary, an Al-free InGaP-GaAs LED on a Si substrate has no significant growth of DLD's, As a result, a stable operation for more than 1500 h has been achieved in an InGaP-GaAs LED on a Si substrate.<
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