The design, fabrication and characterization of GaAs-based RTT with groove and self-aligned Schottky gate structure

In this paper, the design of material structure and device structure , fabrication processing and characterization on GaAs based Resonant Tunneling Transistor (RTT) with groove and self-aligned gate structure have been described completely and systematically .The experimental results measured from our fabricated RTT show that : the maximum value of Peak to Valley Current Ratio (PVCR) is 46, the transconductance g
_m
is in a range of 1.3~8.0 ms, the cutoff frequency f
_Tgm
and speed index S are 1.59 GHz and 13.5 ps/V respectively .