Simulation of charge trapping memory with novel structures

A self-consistent method is employed to refresh the barrier shape by solving Poisson equation during simulating on program/erase/retention (P/E/R) operations of CTM devices. The novel CTM structures with band engineering and hemi-cylindrical (HC) TANOS with different gate stack shapes of θ changing from π/12 to 5π/12 are simulated in order to evaluate the effect of structures on the performance of CTM.