Unified regional modeling approach to emerging multiple-gate/nanowire MOSFETs

This paper reviews the basic governing equations for a double-gate/gate-all-around (DG/GAA) MOSFET in a generic and unified description. Starting from generic Poisson solution and input voltage equation, a paradigm shift with ground-reference and source/drain by label is proposed, which is essential in formulating equations for DG FinFETs without body contact. The unified regional modeling (URM) approach is used for unified surface-potential solutions, and is applied to demonstrate Gummel symmetry in doped DG with partial to full-depletion operations.