RF modeling of integrated RF CMOS Schottky diodes for rectifier designs

In this paper an interdigital n-type CoSi
₂
-Si Schottky diode is fabricated in SMIC 0.13 ¿m RF CMOS process. A p+ guardring around Schottky contacts is used to reduce the leakage current at reverse biases. A novel and accurate Schottky diode model has been developed based on the DC and RF measurement data. In this novel model the losses due to parasitic capacitance dielectric and metal plate are considered. It is shown that the suggested novel model fits the measurement very well for different voltage biases over the wide frequency range of 0.1 GHz to 10 GHz. A type of three stages charge pump is designed using this new Schottky diode model, the design charge pump can get an efficiency of 37%.