Growth Characteristics of Calcium Silicides Films from the Deposited Ca Films at the Different Sputtering Ar Pressure

Thin Ca films were deposited directly on Si(100) substrates at the different deposition Ar pressure using radio frequency (R.F.) magnetron sputtering system (MS) and subsequent annealed at 800 Celsius for 2.5 h or 1.5 h in a vacuum furnace, respectively. The double-structure Ca
₂
Si films and Ca
₅
Si
₃
film are grown directly and individually on Si(100) substrates by an interdiffusion process between the deposited Ca atoms and Si bulk crystals, respectively. Experimental results indicated that the selective grown of a single phase calcium silicide in multiple silicide phases in Ca-Si system depends on sputtering condition, annealing temperature and annealing time, especially sputtering condition is the principal factor for the selective grown because it is close contacted with the morphological character, the bombardment defect, the nucleation density of a calcium silicide in a calcium silicides system by bombardment intensity and so on. Besides, 800°C is the adaptive annealing temperature for a single calcium silicide film growth.