A General and Reliable Model for Charge Pumping—Part II: Application to the Study of Traps in $\hbox{SiO}_{2}$ or in High- $\kappa$ Gate Stacks

The knowledge of the oxide trap characteristics, i.e., density, energy, and depth position, is of great interest not only for MOSFET with SiO
₂
but also for those with high-kappa gate stacks. Using the general charge pumping model derived in Part I, this paper focuses on capture by tunneling and on the energy and depth regions probed in the experimental conditions that may allow the extraction of trap depth concentration profiles in the insulators. The impact on these regions of the asymmetry between the band offsets and of the electric field is studied.