Analysis of Commercial Trench Power MOSFETs' Responses to ${\rm Co}^{60}$ Irradiation

This paper presents a detailed analysis of commercial trench power MOSFET responses to Co
⁶⁰
irradiation of all key d.c. electrical test parameters. Charge trapping in the gate oxide causes the threshold voltage (
V

_TH
) to shift, which, in turn, accounts for most of the degradation exhibited by the device after irradiation.