A hybrid-method for modeling semiconductor power devices

Presented is a unified method for modeling power devices. The method is based on a hybrid algorithm that solves the equations describing the semiconductor partly numerically and partly analytically. A numerical algorithm solves the ambipolar diffusion equation that describes the static and dynamic charge carrier behavior in the lightly doped region of power devices. All other calculations are carried out by using analytical equations. The method has been applied to the power diode, the power bipolar transistor, and the IGBT. The simulation results are compared with measurements.<
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