Extremely low-voltage Fabry-Perot reflection modulators

A normally-on-electroabsorptive surface-normal Fabry-Perot reflection modulator with a reflection change of 47% for an operating voltage swing of only 2 V, i.e. 23%/V, is discussed. The structure has an active region of twenty-four 100-AA-GaAs/100-AA-Al/sub 0.2/Ga/sub 0.8/As multiple quantum wells, sandwiched between two quarter-wavelength grating mirrors with the bottom one more reflective. The wavelength range over which more than half of the maximum reflection change is observed is as wide as approximately 7 nm for 2 V.<
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