Fabrication, measurement and tuning of a photonic crystal H1-cavity in deeply etched InP/InGaAsP/InP

A point defect cavity (H1) was fabricated by deep etching in the InP/InGaAsP/InP system. The optical properties of the devices were experimentally investigated by transmission spectroscopy yielding a Q-factor of ∼65. The resonance frequency of the defect cavity was shifted, by infiltrating the surrounding holes with both a polymer and liquid crystal. Furthermore, the transmission was enhanced by a factor ≪ 5 as a result of the filling.