Studies on TlInGaAsN double quantum well structures

In the pursuit of devices with reduced temperature-dependent emission wavelengths, TlInGaAsN double quantum well (DQW) structures with different barriers were grown on GaAs substrates by MBE and investigated. Although TlGaAsN barriers gave rise to higher Tl incorporation, as compared to TlGaAs barriers, the presence of lot of dislocations and very rough interfaces reduced the PL characteristics. The TlGaAsN barrier layer was modified with different combinations and the resultant samples are analyzed by SIMS, HRXRD, X-TEM and PL measurements. DQW Structures with combined barriers of TlGaAsN+TlGaAs+TlGaAsN and that with reduced N%-TlGaAsN barrier samples showed improved crystalline characteristics.