Multilayer 1.4 μm InAs quantum dots with thin spacer using GaNAs strain compensation layer

Multilayer of InAs QD with thin spacer thickness using GaNAs stress compensation layers (SCL) was investigated for the purpose of high modal gain. Multilayer up to 5 layers with 18 nm thin spacer thickness was realized in 1.4 um wavelength range without degradation of optical quality. This result indicates advantage of GaNAs spacer for multi stacking with thin spacer layer thickness.