InGaAs/InAlAs SCH-MQW lasers with superlattice optical confinement layers grown by MBE

InGaAs/InAlAs separate-confinement-heterostructure multiple-quantum-well (SCH-MQW) lasers with superlattice optical confinement layers grown by molecular beam epitaxy are discussed. Room-temperature operation with a low threshold current density of 1.7 kA/cm/sup 2/ at 1.537 mu m wavelength is obtained for these lasers.<
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