Integrated 32 × 32 pyroelectric ir sensor array in nmos/jfet circuitry using highly (001) oriented pzt thin films on epitaxial y-al2o3/si substrates

Integrated 32 × 32 pyroelectric IR sensor array in nMOS/JFET circuitry using highly (001) oriented Pb(Zr0.4, Ti0.6)O3 (PZT) thin films on epitaxial y-Al2O3/Si substrates has been fabricated on the one chip. The sensor array utilizes a sol-gel deposited PZT(001) thin film as a pyroelectric material, an n-JFET as a low noise detection device, and a micromachined membrane supported by four beams as a thermal isolation structure on epitaxial Pt(001)/y-Al2O3(001)/Si(001) substrates.