Bipolar transistor fabrication using selective epitaxial growth of P- and B-doped layers in gas-source Si molecular beam epitaxy

Si n-p-n bipolar transistor fabrication using selective epitaxial growth in disilane gas-source Si molecular beam epitaxy (Si-MBE) is discussed. Selective growth of B-doped and P-doped Si was used for the base- and emitter-layer formation, respectively. The growth temperature was 600 degrees C. No ion-implantation process was used. The base ohmic contact was formed using Al selective chemical vapor deposition. The fabricated transistor showed normal emitter-base and base-collector I-V characteristics. The common-emitter characteristics revealed a maximum current gain of 30.<
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