A Study on aggressive proximity of embedded SiGe with comprehensive SDE engineering for 32 nm-node high-performance pMOSFET technology

We have presented the high performance pMOSFET with embedded SiGe (eSiGe) technique which is applicable to 32 nm node ground rule (dense gate space). In general, close eSiGe S/D structure to the channel improves pMOSFET performance because of higher strain in the channel. However, we found the relation between boron diffusion modulation in SiGe region and short channel effect (SCE) in the context of eSiGe proximity change. Therefore, additional source drain extension (SDE) optimization is required to improve device performance with close eSiGe structure focusing on parasitic resistance reduction. As a results, we have demonstrated high drive current of 755 muA/mum at V
_dd
= 1.0 V, I
_OFF
= 100 nA/mum, 30 nm gate length pMOSFET.