TCAD analysis for channel profile engineering with carbon doped Si (Si:C) layer for post-32 nm node bulk planar nMOSFETs

Carbon doped Si (Si:C) layer suppresses the boron diffusion and makes the steep channel profile; therefore, it is important to clarify the advantage of channel profile engineering using Si:C layer for the bulk planar nMOSFETs of post-32 nm technology node. In this paper, we demonstrate the merits of retrograde channel device with Si:C layer at 25 nm gate length, including the application for the bulk planar nMOSFETs with metal gate/ higher-k dielectrics by TCAD analysis.