Carbon and tungsten sputtering in a helium magnetron discharge

This study reports on carbon and tungsten deposition on a heated silicon substrate under He
⁺
bombardment in a magnetron sputtering device. The discharge was operated at constant pressure of 1.33 Pa for two discharge current intensities (200 mA and 600 mA) and target power density up to 40 Wcm
^-2
. The deposited films were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffractometry (XRD). The topography and cross section reveals the influence of the target power density on the surface roughness, grains size and thickness of the deposited films.