Electron drift velocity control in transistor structure based on GaAs quantum wire

The Monte-Carlo simulation of electron transport in GaAs-in-Al
₂
O
₃
quantum wire transistor structure is performed with account of electron scattering by the localized acoustic and polar optical phonons and surface roughness. The dependencies of electron drift velocity on the longitudinal electric field strength at 77 and 300 K are calculated. The possibility of electron drift velocity control via the variation of the gate potentials leading to change in electron scattering rates is investigated.