Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process

A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-mum LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/degC under the supply voltage of 10 V. The proposed bandgap voltage reference circuit can be applied on precise analog circuits for System-on-Panel (SoP) or System-on-Glass (SoG) applications.