Energy and emission spectra of the Ga1−xInxAsySb1−y/AlxGa1−xAsySb1−y multiple-quantum-well heterostructures

For asymmetric multiple-quantum-well heterostructures based on Ga
_1-x
In
_x
As
_y
Sb
_1-y
/Al
_x
Ga
_1-x
As
_y
Sb
_1-y
semiconductors it is shown that a wide and almost flat waveguide gain spectrum can be obtained over the 2.3-2.84 mum spectral range. Main attention is devoted to the results obtained under study of spectral characteristics of two- and four- quantum-well structures with active region layers of different widths. Numerical simulation for band diagrams of the active region and emission spectra are performed.