Equivalent circuit model for GaN-HEMTs in a switching simulation

An equivalent circuit model for gallium nitride-based high electron mobility transistors (GaN-HEMTs) in an exact circuit simulation is proposed. The equivalent circuit contains inherent GaN device properties, such as current-collapse and shot-channel effects. Base on the equivalent model, an power loss simulator was developed. The simulation accuracy was more than 93%. A converter optimum design method is discussed using the power loss simulator.