BiCMOS technology improvements for microwave application

The third generation of NXP 0.25 μm SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has f
T
/f
max
of 216/177 GHz and BV
cb0
of 5.2 V. The high-voltage NPN has 12 V BV
cb0
, and f
T
/f
max
of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record |S12| of −60 dB at 10 GHz.