A Physics-Based Model for a SiC JFET Device Accounting for the Mobility Dependence on Temperature and Electric Field

In this work a physical model for a SiC Junction Field Effect Transistor (JFET) is presented. The novel feature of the model is that the mobility dependence on both temperature and electric field is taken into account. This is particularly important for high-current power devices, where the maximum conduction current is limited by drift velocity saturation in the channel. The model equations are described in detail, emphasizing the differences introduced by the field-dependent mobility model. The model is then implemented in Pspice. Both static and dynamic simulation results are given. The results are validated with experimental results under static conditions and under resistive switching conditions.