The radiation characteristics of Partial SOI VDMOS

The partial SOI structure of VDMOS is proposed in paper. The transient radiation and single-event-effect characteristics of the device are discussed. The results are shown that the transient radiation toleration of the partial SOI VDMOS is twice times than that of the conventional VDMOS with the same excellent power characteristics, single-event-effect toleration of the partial SOI VDMOS is more than that of the conventional VDMOS, and the critical LET of the partial SOI VDMOS is two times than the conventional VDMOS.