Hole velocity enhancement in sub-100 nm gate length strained-SiGe channel p-MOSFETs on insulator

Hole effective mobility and velocity have been extracted from measurements of sub-100 nm gate length strained Si
_0.45
Ge
_0.55
channel MOSFETs. The hole effective mobility is observed to provide a 2.4x enhancement over Si hole universal mobility for channel lengths in the range of 200 to 80 nm. The extracted virtual source velocity is enhanced by 45% relative to Si control devices. These results are promising for future high-Ge content SiGe-channel p-MOSFETs.