PD-SOI MOSFET Body-to-Body leakage scaling trend and optimization

Body-to-Body leakage (BBL) in stacked transistor configuration has been characterized by different back gate biases (Vbg), SOI thicknesses, and poly spacings. BBL increases significantly from 65 nm to 45 nm node mainly due to smaller poly spacing and shallower S/D junctions. By implant optimization and reduction of the SOI thickness, BBL can be reduced below reverse junction leakage level.