Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

The growth of AlGaN/GaN-based heterostructure on Si(110) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural, optical, and electrical properties of such heterostructure are assessed and are quite similar to the ones obtained on Si(111). A 2-D electron gas is formed at the Al
_0.3
Ga
_0.7
N/GaN interface with a sheet carrier density of 9.6 times 10
¹²
cm
^-2
and a mobility of 1980 cm
²
/V middots at room temperature. Preliminary results concerning high-electron-mobility-transistor static characteristics are presented and compared with that of devices realized on other orientations of silicon.