An InP HBT-Based Oscillator Monolithically Integrated With a Photodiode

An indium phosphide heterojunction bipolar transistor (InP HBT) oscillator chip was monolithically integrated with an on chip p-i-n photodiode. A controllable locking range was obtained in unidirectional injection locking. High-purity optoelectronic oscillator with parasitic modes lower than -4 dBc resulted from bidirectional injection locking. The optoelectronic oscillator power consumption was 50 mW while providing output power of - 2 dBm . The overall chip size is 1.3 times 0.8 mm.