Laser-formed metallic connections employing a lateral link structure

Laser-programmed connections between metal lines on the same level of metallization have been developed as a means to achieve high density linking for customization in programmable gate arrays and for additive redundancy in restructurable integrated circuits. This work reports on the linking of aluminum based metal interconnect using a Q-switched diode pumped solid state laser where perfect yield was achieved. The links were formed by focusing the laser between two adjacent lines of metal, one of which was connected to a lower level of metal through a contact via. The resistance of the connections was approximately 3.0 /spl Omega/, including two vias and a connecting length of lower level metal.<
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