Air-spacer Self-Aligned Contact MOSFET for future dense memories

An air-spacer SAC (Self-Aligned Contact) transistor is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. 3D mixed mode simulation shows that the 35% area benefit can be retained while improving the speed to be 10% better than a non-SAC device and switching energy to 82%.