Source/drain engineering for high-performance deep sub-100nm Ge-pMOSFETs using Full-Band Monte Carlo simulation

Full-band Monte Carlo simulation was performed to explore the optimal source/drain (SD) structure for deep sub-100nm Ge-pMOSFETs. Comparing the source-to-channel carrier injection characteristics of metal SD and conventional pn-junction SD devices, suitable SD structure for high-performance Ge-devices were discussed. MSD devices outperform pn-SD ones in the “Schottky” SD condition while they exhibit almost the same device characteristics in the “ohmic” SD condition.