Influence of Si crystallization evolution on the Er luminescence in superlattices Er:Si /Al2O3

Er:Si/Al
₂
O
₃
superlattices are fabricated by pulsed laser deposition (PLD) technique. Photoluminescence (PL) and PL excitation spectra measurements are carried out. The annealing temperature dependent PL intensity curves are presented. The influence of Si crystallization on the Er ions luminescence shows that the thinner the Si layer, and the shorter the distance r, the better its sensitizing performance.