Light emitting transistors using silicon quantum dots in an organic matrix

The fabrication of silicon based light emitting devices attracts considerable interest due to its potential application in low cost display devices and integrated optoelectronics. Since the discovery of size tunable visible emission from quantum confined porous silicon, electroluminescent devices that use quantum efficient nanoparticles have been sought for their potential high power efficiency and low cost applications. Si has several major advantages compared to III–V and II–VI quantum dot approaches due to its ready availability, low cost, low toxicity for consumer products, and compatibility with conventional integrated circuit processing.