Random Telegraph Signals in Proton Irradiated CCDs and APS

Random telegraph dark signal fluctuations have been studied in two types of CCD and two types of CMOS active pixel sensor after proton irradiation at 1.5, 10 and 60 MeV. Time constants and activation energies were very similar, indicating a similar defect type. A large fraction of the defects are multi- rather than 2-level, suggesting a mechanism related to defect clusters being formed from initial single proton events.