Measurement and Analysis of Interconnect Crosstalk Due to Single Events in a 90 nm CMOS Technology

The presence of single event (SE) induced interconnect crosstalk has been measured and demonstrated experimentally using single and two photon laser absorption techniques in the IBM 90 nm CMOS9SF process. The dependency of SE interconnect crosstalk on the interconnect length and on the amount of deposited charge has been quantified through 3D mixed-mode simulations at this technology for two different supply voltages. Experimental and simulation results show this effect to increase the cross-section susceptible to SEs requiring careful design considerations to assure desired hardness levels.