Terahertz silicon lasers

Stimulated donor and Raman Stokes emission has been achieved under intracenter excitation and photoionization of shallow donor centers in silicon. A pulsed laser emission of up to a few mW of peak power in the 1-7 THz frequency range has been obtained at low temperatures (< 30 K). Thorough laser characterization and further optimization of the laser threshold and efficiency has been carried out.