Growth and micro-photoluminescence study of Si-doped GaAs nanoneedles grown on Si substrates

We report the growth and the micro-photoluminescence (mu-PL) study of Si-doped GaAs nanoneedles (NNs) grown on Si substrates by MOCVD. NN shape was not affected by the addition of Si dopants. The mu-PL peak wavelength was found redshifted with increasing disilane doping flow rate indicating bandgap narrowing. The mu-PL peak intensity was also higher as doping flow rate increased.