An extrinsic component parameter extraction method for high power RF LDMOS transistors

A new extrinsic network and extrinsic parameter extraction methodology is developed for high power RF LDMOS transistor modeling. This new method uses accurate manifold de-embedding using electromagnetic simulation, and optimization of the extrinsic network parameter values over a broad frequency range. The new extrinsic network accommodates feedback effects which are observed in high power transistors. This improved methodology allows us to achieve a good agreement between measured and modeled S-parameters in the frequency range of 0.5 to 6 GHz for different bias conditions. Large-signal verification of this new model shows a very good match with measurements at 2.14 GHz.