800W UHF SiC SIT transistor for radar applications

The performance of an 800 Watt SiC SIT device using state of the art silicon carbide technology is described. Operating under pulsed RF conditions of 300uS Pulse Width, 10% Duty Cycle, it can deliver 800 Watts peak power at 96 Volts. More than 50% efficiency and 9 dB gain are attained over the bandwidth of 400–450 MHz. The power density is 3.1 Watt/Mil. Thermal resistance is 0.14°C/W. The junction temperature remains below 170°C at a flange temperature of 70°C. This combination of high power density and high voltage operation makes these new generation devices ideally suited for transmitter designs in UHF Radar systems.