Design and investigation of a travelling wave amplifier in SOI CMOS with bulk contacts for operation up to 40 GHz

The design of a travelling wave amplifier in silicon on insulator CMOS technology with operation up to 40 GHz is presented. Bulk contacts are implemented to avoid undesired memory effects. The influence of the applied bulk voltage is investigated. At 50 Omega terminations and 2 V times 38 mA supply power, a gain of more than 10 dB and 8 dB are measured up to 26 GHz and 40 GHz, respectively. Between 1 GHz and 10 GHz, the noise figure is below 6 dB.