Impacts of $\hbox{N}_{2}$ and $\hbox{NH}_{3}$ Plasma Surface Treatments on High-Performance LTPS-TFT With High-$\kappa$ Gate Dielectric

Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high- kappa gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility mu
_FE
improvements of ~ 86.0% and 112.5% are observed for LTPS-TFTs with HfO
₂
gate dielectric after N
₂
and NH
₃
plasma surface treatments, respectively. In addition, the N
₂
and NH
₃
plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility mu
_FE
at high gate bias voltage
V

_G
, resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage
V

_TH
~ 0.33 V, excellent subthreshold swing S.S. ~ 0.156 V/decade, and high field-effect mobility mu
_FE
~ 62.02 cm
²
V middots would be suitable for the application of system-on-panel.