A Novel Dual-Layered Electrolytic Resistance Memory with Enhanced Retention

A novel dual-layered electrolytic resistance memory is proposed and its high retention ability at room and elevated temperature is successfully demonstrated. This dual-layered memory cell was fabricated as cross-point structure with active material, Cu containing Ge
_0.3
Se
_0.7
based solid electrolyte and a thin insulator layer stack, sandwiched between an inert Pt bottom electrode and an oxidizable Cu top electrode. The reduction of the cell programming current up to few nA achieved with this dual- layered memory cell is promising for low power consumption applications.