Simulations for Vertically Coupled Wave-Functions of Electrons on the Multiple Lens-Shaped InAs/In(Ga)As Quantum Dot Layers with Dependences of GaAs Spacing Layer

Electronic and optical properties of ideal and realistic quantum dots (QDs) are extensively studied and derived for the recent decade. Strain caused by the differences of the lattice constants of dot and wetting, barrier materials are decisive for both the self-assembly mechanisms and the electro-optical properties. This paper is mainly investigated for 3-dimensional (3D) electrical wave-functions and eigen-levels of multiple InAs/In(Ga)As self-assembled QDs matrix embedded in GaAs spacing layer incorporated with the three-dimensional (3D) Schrodinger equation and solved by using numerical finite element method (FEM) and PC-based dual-core CPU hardware. In this study, we will compare the samples with free and GaAs spacing layers of different thickness to investigate the influences on vertically coupled probability of density wave- functions. The spatially 3-dimensional ground-state wave- functions (|Psi|
²
) of 3-stacked InAs/InGaAs QD matrix with free GaAs spacing layer show the vertically strong coupled wave- functions are clarified to be demonstrated which will enhance the electrical propagated probability between vertically adjacent QD layers. And the vertically decoupled wave-functions (|Psi|
²
) are observed until the thickness of GaAs spacing layers are thicker than 2 nm.