C60 nanowhiskers for electronics: Field-effect-transistor characteristics of pure and solvate C60 nanowhiskers

A pure and solvate C60 nanowhisker (NW) has been synthesized in N2 environment so as to study the C60-NW-based field effect transistor (FET) characteristics using X-ray diffraction, atomic-force microscopy, and scanning electron microscopy. The FET has been worked even at the solvate condition, and shows the highest on/off ratio in the various conditions. The crystalline structure changes from a highlyoriented hexagonal structure to a disordered face centered cubic structure after evaporating the solvent with an introduction of high-density dislocations and gate-independent carriers in C60 NWs. It is found that the solvate C60-NW FET shows a clear improvement of on/off ratio, however we need an appropriate solvent in order to improve the mobility.