Indium phosphide nanowire photoconductors on non-single crystalline silicon-based platform

We describe the fabrication and characterization of photoconductors in which an ensemble of indium phosphide nanoneedles was utilized. DC electrical transport properties of the fabricated photoconductors were characterized under illumination with monochromatic light at 633 nm. This is the first demonstration of III-V compound semiconductor nanometerscale structures monolithically integrated on non-single crystalline silicon-based materials as an optoelectronic device that can be fabricated by a simple and flexible process not limited by single crystal substrates.